Reprints from my posting to SAN-Tech Mailing List and ...


[san-tech][03228] IBM から Phase Change Memoryプレスリリース, 30 June 2011 (Re: UCSD: Phase Change Memory-Based SSD)

Date: Thu, 30 Jun 2011 18:17:59 +0900
[san-tech][03149] UCSD: Phase Change Memory-Based SSD
  Date: Sat, 04 Jun 2011 01:40:13 +0900
IBMから Phase Change Memoryについてのプレスリリースです:

"IBM scientists demonstrate memory breakthrough for the first time"
 Reliable multi-bit phase-change memory technology demonstrated
 30 June 2011

  "For the first time, scientists at IBM Research have demonstrated that
   a relatively new memory technology, known as phase-change memory (PCM),
   can reliably store multiple data bits per cell over extended periods
   of time."

Multi-level Phase Change Memory Breakthrough

  "To achieve this breakthrough demonstration IBM scientists in Zurich
   used advanced modulation coding techniques to mitigate the problem of
   short-term drift in multi-bit PCM, which causes the stored resistance
   levels to shift over time, which in turn creates read errors. Up to now,
   reliable retention of data has only been shown for single bit-per-cell
   PCM, whereas no such results on multi-bit PCM have been reported."

  "The paper "Drift-tolerant Multilevel Phase-Change Memory" by
   N. Papandreou, H. Pozidis, T. Mittelholzer, G.F. Close, M. Breitwisch,
   C. Lam and E. Eleftheriou, was recently presented by Haris Pozidis at
   the 3rd IEEE International Memory Workshop in Monterey, CA."

IEEE Xplore:

Memory technologies, IBM Research - Zurich
Phase change memory

"Making Speedy Memory Chips Reliable"
 IBM believes a new way of encoding the bits in phase-change memory
 will it reliable enough for use in servers.
 JUNE 30, 2011, Technology Review, MIT

"IBM boffins claim phase change memory breakthrough"
 30th June 2011, The Register
IBM Research's experimental PCM chip
DRAM vs flash vs phase change memory (click to enlarge)
  "There is a bit of research that needs to be done before PCM can be
   commercialized, of course. But the fact that IBM's boffins have been
   able to show that a two-level PCM memory chip operating at room
   temperature could be read after 156 days using an algorithm that was
   two orders of magnitude more robust than prior decoding methods is
   a step in the right direction"


> "【IMW 2011レポート】容量当たりコストでNANDに追い付く相変化メモリ"
>  2011年 6月 2日、

で紹介している、IBM + Macronix Internationalの
"A Novel Reconfigurable Sensing Scheme for Variable Level Storage in
 Phase Change Memory"
 Li, Jing, et al.

IEEE Xplore

です (こちらは IBM Watson研究所がメイン、冒頭のは Zurichがメイン)。

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